Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamino-Arsine and Trimethylgallium

Publisher Website
Google Scholar
Abstract
It was found that carbon incorporation in GaAs chemical beam epitaxy (CBE) using trisdimethylamino-arsine (TDMAAs) and trimethylgallium (TMGa) strongly depends on the V/III ratio and the cracking temperature of TDMAAs. Although a high concentration of carbon was incorporated for the growth with low V/III ratio, the carbon concentration was reduced to the order of 1016 cm-3 at high V/III ratios. For the layer grown using TDMAAs precracked at 550° C by a cracker cell, the carbon concentration was above 1019 cm-3. These results suggest that arsenic-dimethylamine (DMA) bonds rather than DMA itself play an important role in the carbon gettering mechanism.