2 µm resonant cavity enhanced InP/InGaAssingle quantum well photo-detector
- 22 July 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (15) , 1272-1274
- https://doi.org/10.1049/el:19990620
Abstract
Experimental results are presented for a resonant cavity enhanced photodetector operating at 2 µm based on absorption in a single, strain-compensated, In0.83Ga0.17As quantum well. The device exhibits a selectivity of 9 nm, and 18% quantum efficiency. InP/InGaAs and Si/SiO2 material systems are used for the bottom and top Bragg reflectors of the resonant cavity, respectively. The dark current densities are lower than 10-6 A/cm2 at 2 V reverse bias.Keywords
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