Nature of interfaces and oxidation processes in Ge+-implanted Si

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Abstract
We have studied the nature of the interfaces between silicon dioxide and germanium‐rich layer (SiO2/GexSi1−x) in Ge+‐ion implanted and oxidized Si (100) samples. A series of implants were used to study the interfacial roughness as a function of implant dose. Oxidations were carried out at temperatures both above and below the viscous flow point of silicon dioxide (SiO2). In each case, the SiO2/GexSi1−x interface was found to be sharper on an atomic scale compared to the oxide/silicon (SiO2/Si) interface in virgin Si formed after similar oxidation treatments. An enhancement in oxidation was found for the implanted samples over the virgin silicon samples. This enhancement was greater for oxidation carried out at 900 °C for 30 min compared to that at 1000 °C for 20 min. At the higher implant doses, predominantly 60° misfit dislocations were observed at the GexSi1−x/Si interface. The mechanism of oxidation leading to these phenomena is discussed in detail.

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