Yellow–green luminescence from isoelectronic nitrogen centers in GaP grown by molecular-beam epitaxy

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Abstract
Molecular‐beam‐epitaxial growth of GaP incorporating isoelectronic N traps was achieved through coinjection of NH3 and PH3 which were dissociated into P2 and PN fluxes. The photoluminescencespectrum of a sample with a N concentration of ∼2×1019 cm−3 indicated that the dominant emission wavelength was at 5691 Å (2.18 eV), which is characteristic of the nearest‐neighbor pair transition NN1. The spectrum of a sample containing ∼2×1020 cm−3 N atoms also displayed strong NN1 pair luminescence in addition to much stronger emission line at 5846 Å (2.121 eV), which is believed to be from a local mode outside the vibrational band. The peak intensity of this local mode was ∼25 times greater than the peak emission of the NN1 line from the lighter doped sample.