Characteristics of metallic polymer and Au Schottky contacts on cleaved surfaces of InSe(:Er)
- 30 June 1997
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (6) , 924-926
- https://doi.org/10.1016/s0038-1101(97)00022-1
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- High barrier metallic polymer/p-type silicon Schottky diodesSolid-State Electronics, 1996
- Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurementsSolid-State Electronics, 1995
- Metallic polythiophene/inorganic semiconductor Schottky diodesPhysica B: Condensed Matter, 1993
- Semiconductive polymer-based Schottky diodeJournal of Applied Physics, 1992
- Rectifying metal-polymer contacts formed by melt processingApplied Physics Letters, 1990
- Electrical and photovoltaic properties of indium-tin-oxide/p-InSe/Au solar cellsJournal of Applied Physics, 1987
- Admittance spectroscopy of traps in AuInSe Schottky cellsSolid-State Electronics, 1984
- Photovoltaic effect in gold-indium selenide Schottky barriersJournal of Applied Physics, 1983
- Photoconductivity and photovoltaic effect in indium selenideJournal of Applied Physics, 1983
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971