Exciton Magnetoluminescence Studies in Ordered and Disordered In0.48Ga0.52P Semiconductor Alloys
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Magnetic-field-dependent excitonic photoluminescence linewidth inP semiconductor alloysPhysical Review B, 1992
- Ordering-induced band-gap reduction in (x≊0.4) alloys and superlatticesPhysical Review B, 1992
- Theory of the effect of magnetic field on the excitonic photoluminescence linewidth in semiconductor alloysJournal of Applied Physics, 1991
- Unusual properties of photoluminescence from partially ordered Ga0.5In0.5PApplied Physics Letters, 1990
- Excitation intensity dependence of photoluminescence in Ga0.52In0.48PApplied Physics Letters, 1990
- Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxyApplied Physics Letters, 1990
- X-ray observation of compositional modulation caused by phase decomposition in GaInP ternary alloysApplied Physics Letters, 1990
- Electrical Characteristics Of MBE-Grown GaAs1-Sbx On InP And Correlation With Film MicrostructurePublished by SPIE-Intl Soc Optical Eng ,1988
- Ordering in GaAs1−xSbx grown by molecular beam epitaxyApplied Physics Letters, 1987
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987