InAs channel heterostructure-field effect transistors with InAs/AlSb short-period superlattice barriers

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Abstract
We report on the implementation of InAs‐channel heterostructure‐field‐effect transistors (HFETs) fabricated with InAs/AlSb short‐period superlattice barriers. The InAs/AlSb superlattice barrier structure is advantageous for InAs/AlSb HFETs because of its improved chemical stability against oxidation when compared to pure AlSb, and its compatibility with silicon as an n‐type dopant during growth by molecular beam epitaxy. The structures examined here consist of a 200‐Å‐wide InAs quantum well inserted between 25/25 Å InAs/AlSb superlattice barriers that provide a 0.5 eV conduction band discontinuity between the quantum well and the superlattice barrier. Fabricated HFET devices display complete channel modulation, confirming the field‐effect operation at room temperature. In addition, we demonstrate the modulation doping of an InAs quantum well clad by silicon‐doped InAs/AlSb superlattice barriers.