Structural and transport properties of InAs/AlSb superlattices
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 879-882
- https://doi.org/10.1016/0022-0248(95)80065-k
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Double-heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layersApplied Physics Letters, 1994
- High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/mIEEE Photonics Technology Letters, 1994
- InAs/Ga1−xInxSb strained-layer superlattices grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopyJournal of Applied Physics, 1987
- Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxyApplied Physics Letters, 1986
- X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuityApplied Physics Letters, 1986