Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs
- 15 July 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (2) , 1051-1053
- https://doi.org/10.1063/1.349693
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- The role of Ga antisite defect in the activation process of transmuted impurities in neutron-transmutation-doped semi-insulating GaAsJournal of Applied Physics, 1990
- Native and irradiation-induced monovacancies inn-type and semi-insulating GaAsPhysical Review B, 1990
- Electron-irradiation effects on the infrared absorption properties of theEL2 defect in GaAsPhysical Review B, 1989
- Infrared absorption of electron irradiation induced deep defects in semi-insulating GaAsApplied Physics Letters, 1988
- Native defects in gallium arsenideJournal of Applied Physics, 1988
- Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron IrradiationJapanese Journal of Applied Physics, 1988
- γ-ray enhanced quenching phenomenon of photoconductance in undoped and In-doped semi-insulating GaAsApplied Physics Letters, 1988
- Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAsJournal of Applied Physics, 1988
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985
- Close-contact annealing of ion-implanted GaAs and InPApplied Physics Letters, 1980