Growth of AlxGa1−xSb and GaSb bulk crystals with liquid phase electro-epitaxy (LPEE)
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 128 (1-4) , 466-469
- https://doi.org/10.1016/0022-0248(93)90368-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Growth of AlxGa1−xSb bulk material from metallic solutionJournal of Crystal Growth, 1991
- On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structuresJournal of Applied Physics, 1990
- Electroepitaxy of multicomponent systems: ternary and quarternary compoundsJournal of Applied Physics, 1980
- Liquid-phase electroepitaxy: Growth kineticsJournal of Applied Physics, 1978
- Thickness Uniformity of GaAs Layers Grown by ElectroepitaxyJournal of the Electrochemical Society, 1978