Growth of AlxGa1−xSb bulk material from metallic solution
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 465-472
- https://doi.org/10.1016/0022-0248(91)90223-r
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Crystal growth in mirror heaters: Time markers by lamp pulsesJournal of Crystal Growth, 1990
- n-type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- THM growth and properties of In1−xGaxP bulk materialJournal of Crystal Growth, 1989
- Negative differential resistance in AlGaSb/InAs single-barrier heterostructures at room temperatureApplied Physics Letters, 1989
- Characterization and growth of Al0.065Ga0.935Sb by liquid phase epitaxyJournal of Crystal Growth, 1988
- LPE growth rate in AlxGa1−xAs system; theoretical and experimental analysisJournal of Crystal Growth, 1983
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981
- The A1-Ga-Sb ternary phase diagram and its application to solution growthJournal of Crystal Growth, 1979