LPE growth rate in AlxGa1−xAs system; theoretical and experimental analysis
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (2) , 268-274
- https://doi.org/10.1016/0022-0248(83)90133-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growthJournal of Electronic Materials, 1981
- Improvement of Crystal Composition in Ga1-xAlxAs LPE Layers Grown under Conditions of Constant Cooling RateJapanese Journal of Applied Physics, 1978
- Dependence of Ga1-xAlxAs LPE layer thickness on solution compositionJournal of Crystal Growth, 1977
- Variation of Solid Composition and Thickness during LPE Growth of Al x Ga1 − x AsJournal of the Electrochemical Society, 1976
- The influence of growth solution thickness on the LPE layer thickness and constitutional supercooling requirement for diffusion-limited growthJournal of Crystal Growth, 1974
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs AlloysJournal of Crystal Growth, 1974
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growthJournal of Crystal Growth, 1969
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965