In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide

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Abstract
We have used scanning electron microscopy (SEM) for real-time observation of surface evolution during molecular beam epitaxy (MBE) of GaAs. Surface morphology oscillation is imaged in the initial stage of growth. The nucleation-coalescence process of 2D islands is directly compared with the reflection high-energy electron diffraction intensity oscillation. The first-layer islands coalesce almost completely to form a uniform layer, while holes and islands are observed on successive layers. The size of nucleated islands increases every layer-growth cycle, resulting in multilayer growth and coarsening of the surface.