An STM study of molecular-beam epitaxy growth of GaAs

This publication has 10 references indexed in Scilit:

• Scaling analysis of surface roughness and Bragg oscillation decay in models for low-temperature epitaxial growth
  Surface Science, 1992
• Surface evolution during molecular-beam epitaxy deposition of GaAs
  Physical Review Letters, 1992
• Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)
  Physical Review B, 1992
• Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy
  Physical Review B, 1992
• In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy
  Applied Physics Letters, 1992
• A combined molecular-beam epitaxy and scanning tunneling microscopy system
  Review of Scientific Instruments, 1991
• Behavior of the first layer growth in GaAs molecular beam epitaxy
  Applied Physics Letters, 1990
• Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
  Physical Review Letters, 1988
• Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
  Physical Review Letters, 1987
• Dynamics of film growth of GaAs by MBE from Rheed observations
  Applied Physics A, 1983