Behavior of the first layer growth in GaAs molecular beam epitaxy
- 1 October 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (14) , 1392-1394
- https://doi.org/10.1063/1.103445
Abstract
The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.Keywords
This publication has 8 references indexed in Scilit:
- Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxyElectronics Letters, 1989
- Nature of the oscillatory surface smoothness and its consequence during molecular-beam epitaxy of strained layers: A computer simulation studyJournal of Applied Physics, 1989
- Monte Carlo simulations of the growth of diamond-structure semiconductors and surface-reflected electron-beam intensities during molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Reflection high-energy electron diffraction studies of principal streak intensity profiles and adatom coverage of (100) GaAs grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985
- Calculation of MEED intensities in the 5–10 keV electron energy rangeSurface Science, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983