Fabrication of [110]-aligned Si quantum wires embedded in SiO2 by low-energy oxygen implantation
- 1 January 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 147 (1-4) , 304-309
- https://doi.org/10.1016/s0168-583x(98)00539-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO2 by Molecular Beam Epitaxy with Low Energy Oxygen ImplantationJapanese Journal of Applied Physics, 1997
- Fabrication of highly oriented Si:SiO2 nanoparticles using low energy oxygen ion implantation during Si molecular beam epitaxyApplied Physics Letters, 1996
- Fabrication and Transport Properties of Silicon Quantum Wire Gate-All-Around TransistorJapanese Journal of Applied Physics, 1996
- A silicon-on-insulator quantum wireSolid-State Electronics, 1996
- Fabrication of sub-10-nm silicon lines with minimum fluctuationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994
- Formation mechanisms of dislocation and Si island in low-energy SIMOXNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- Silicon-on-insulator device islands formed by oxygen implantation through patterned masking layersJournal of Applied Physics, 1991
- Fabrication of Thin Silicon Wires by Anisotropic Wet Etching of SOI StructuresJapanese Journal of Applied Physics, 1991
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978