Fabrication of Thin Silicon Wires by Anisotropic Wet Etching of SOI Structures
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9A) , L1605-1607
- https://doi.org/10.1143/jjap.30.l1605
Abstract
A fabrication method of thin single-crystalline silicon wires on SiO2 is reported. The wires are fabricated by anisotropic wet etching of (110) and (100) SOI wafers. We obtained a thin (110) SOI wire of 0.2 µm width and 0.2 µm height with a rectangular cross section. Since the (110) SOI wires are enclosed by a pair of ultraflat {111} side walls parallel to each other, this method has the potential to form ultranarrow wires by careful control of the etching conditions.Keywords
This publication has 9 references indexed in Scilit:
- Fabrication of Nanostructure by Anisotropic Wet Etching of SiliconJapanese Journal of Applied Physics, 1988
- Mesoscopic coherence phenomena in semiconductor devicesIBM Journal of Research and Development, 1988
- Fabrication of free-standing single-crystal silicon wiresApplied Physics Letters, 1988
- Quantum transport in an electron-wave guidePhysical Review Letters, 1987
- Wafer bonding for silicon-on-insulator technologiesApplied Physics Letters, 1986
- Aperiodic magnetoresistance oscillations in narrow inversion layers in SiPhysical Review Letters, 1985
- Magnetoresistance of small, quasi-one-dimensional, normal-metal rings and linesPhysical Review B, 1984
- Electron Beam Exposure of SiliconesJournal of the Electrochemical Society, 1969
- A Water-Amine-Complexing Agent System for Etching SiliconJournal of the Electrochemical Society, 1967