Spatial distribution of secondary Si and Al ions in their excited and ground states
- 1 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 48 (1-4) , 585-588
- https://doi.org/10.1016/0168-583x(90)90188-z
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Formation of excited states by ion impact on surfacesProgress in Surface Science, 1980
- On the energy distribution and angular distribution of sputtered particlesRadiation Effects, 1980
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969