Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
- 23 July 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 204 (4) , 462-474
- https://doi.org/10.1016/s0022-0248(99)00202-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski SiliconJournal of the Electrochemical Society, 1996
- The Dependence of Ring‐Like Distributed Stacking Faults on the Axial Temperature Gradient of Growing Czochralski Silicon CrystalsJournal of the Electrochemical Society, 1996
- Generation of Oxidation-Induced Stacking Faults in Czochralski-Grown Silicon Crystals Exhibiting a Ring-like Distributed Stacking Fault RegionJapanese Journal of Applied Physics, 1995
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device ProcessingJapanese Journal of Applied Physics, 1992
- Application of Copper-Decoration Method to Characterize As-Grown Czochralski-SiliconJapanese Journal of Applied Physics, 1992
- The effect of thermal history during crystal growth on oxygen precipitation in Czochralski-grown siliconSemiconductor Science and Technology, 1992
- Characterization of Defects in CZ-grown Si Crystals with OSF RingMRS Proceedings, 1992
- Dynamic Behavior of Intrinsic Point Defects in Fz and Cz Silicon CrystalsMRS Proceedings, 1992
- Effects of Thermal History on Microdefect Formation in Czochralski Silicon CrystalsJapanese Journal of Applied Physics, 1985
- Precipitation of oxygen in silicon kinetics, solubility, diffusivity and particle sizePhysica B+C, 1983