Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6R)
- https://doi.org/10.1143/jjap.31.1817
Abstract
A scanning photon microscope (SPM) based on ac surface photovoltage imaging is applied to observe oxygen-related microdefects which are distributed in a ring in oxidized Czochralski-grown silicon wafers, and morphological and microstructural characteristics of the microdefects are then analyzed. The overall distribution of the ring-shaped region revealed by the SPM correspond well to that observed with X-ray topography. The SPM is able to differentiate deteriorated regions as different image contrasts, where stacking faults or oxide precipitates accompanying punched-out dislocation loops exist.Keywords
This publication has 30 references indexed in Scilit:
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon MicroscopeJapanese Journal of Applied Physics, 1988
- Formation of Nuclei of Oxygen Precipitates in CZ Silicon Crystals during Crystal Growth ProcessJournal of the Electrochemical Society, 1988
- A scanning photon microscope for non-destructive observations of crystal defect and interface trap distributions in silicon wafersJournal of Physics E: Scientific Instruments, 1988
- Determination of Conversion Factor for Infrared Measurement of Oxygen in SiliconJournal of the Electrochemical Society, 1985
- Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An OverviewJournal of the Electrochemical Society, 1981
- Growth of Stacking Faults by Bardeen-Herring Mechanism in Czochralski SiliconJapanese Journal of Applied Physics, 1979
- Surface versus bulk nucleated oxidation-induced stacking faults in silicon wafersJournal of Crystal Growth, 1977
- Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures—I. TheorySolid-State Electronics, 1975
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Effect of Crystal Orientation on the Stacking Fault Formation in Thermally Oxidized SiliconJournal of Applied Physics, 1971