Ga1−xAlxAs purification during its liquid phase epitaxial growth in the presence of Yb
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 700-702
- https://doi.org/10.1063/1.100867
Abstract
The influence of Yb added to the melt, on the near‐band‐gap emission of Ga1−xAlxAs grown by liquid phase epitaxy, is reported. No characteristic Yb3+ emission is found, but a pronounced narrowing of the bound‐exciton spectrum is observed for Yb concentrations in the Ga melt below 100 ppm. A similar effect is seen in conduction band to acceptor transitions, for which the smallest linewidth observed is limited by fluctuations in composition and agrees well with the currently accepted 66:34 band‐offset partition between the conduction and valence bands of GaAs/Ga1−xAlxAs heterojunctions in the direct band‐gap range.Keywords
This publication has 21 references indexed in Scilit:
- Band-offsets and effective-mass parameters in quantum wellsSolid State Communications, 1988
- Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InPJournal of Crystal Growth, 1987
- Erbium doping of molecular beam epitaxial GaAsApplied Physics Letters, 1987
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986
- Rare earth ions in LPE III-V semiconductorsJournal of Crystal Growth, 1986
- The Electronic States of a Substitutional Ytterbium Impurity in Indium PhosphideMaterials Science Forum, 1986
- Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth ElementsMaterials Science Forum, 1986
- Alloy broadening in photoluminescence spectra ofPhysical Review B, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1982