Evolution mechanism of nearly pinning-free platinum/n-type indium phosphide interface with a high Schottky barrier height by in situ electrochemical process
- 1 July 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (4) , 1227-1235
- https://doi.org/10.1116/1.589443
Abstract
No abstract availableKeywords
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