Range and thermal-behavior studies of Au and Bi implanted into photoresist films
Open Access
- 1 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (10) , 6145-6153
- https://doi.org/10.1103/physrevb.41.6145
Abstract
The Rutherford backscattering technique has been used to determine range parameters of Au and Bi ions implanted into AZ1350 photoresist films at energies from 20 to 300 keV. The experimental results are 20 to 25% higher than the theoretical predictions by Ziegler, Biersack, and Littmark. Good agreement is achieved only when inelastic effects are included in the nuclear stopping-power regime. In addition, we find that shallow implantation of Bi ions increases the temperature at which the photoresist starts to decompose. This feature is not observed when Au is implanted under the same conditions. Finally, we have studied the thermal behavior of implanted Bi and Au ions. While Bi diffuses regularly, Au does not follow an Arrhenius kind of behavior. In addition, it is shown that the implantation process modifies, via the nonannealed damage, the characteristics of the Bi diffusion behavior.Keywords
This publication has 13 references indexed in Scilit:
- The stopping of ions in compoundsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Depth profiles of Li ions implanted in the photoresist AZ111Journal of Materials Research, 1988
- Range parameters of heavy ions implanted into C filmsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Thermal stability and Bi diffusion in the implanted AZ111 photoresistNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Review of stopping powers in organic materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Effective stopping-power charges of swift ions in condensed matterPhysical Review B, 1982
- Stopping power values of Be, C, Al and Si for 4He ionsNuclear Instruments and Methods, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- High Dose Ion Implantation into PhotoresistJournal of the Electrochemical Society, 1978
- Interpretation of-Ar Collisions at 50 KeVPhysical Review Letters, 1965