Transmission electron microscope study of the growth kinetics of TiSi2 epitaxy on (111)Si
- 15 January 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (2) , 549-551
- https://doi.org/10.1063/1.338256
Abstract
The kinetics of the growth of epitaxial TiSi2 on (111)Si and accompanying microstructural changes have been investigated by examining the same region of a thin foil repeatedly in a transmission electron microscope with intermittent annealings in a diffusion furnace. The evolution of the different modes of C54‐TiSi2 epitaxy was monitored. The dominance of the epitaxy with [101]TiSi2//[111]Si and (3̄13)TiSi2//(22̄0)Si (with about 1° deviation) was found to be due to a faster initial growth rate resulting in a much larger final size than that of the epitaxy with [100]TiSi2//[111]Si and (004)TiSi2//(022̄)Si. The difference in interface energy is conceived to be the dominant factor in affecting the epitaxial growth.This publication has 15 references indexed in Scilit:
- Control of a natural permeable CoSi2 base transistorApplied Physics Letters, 1986
- Localized epitaxial growth of C54 and C49 TiSi2 on (111)SiApplied Physics Letters, 1985
- Localized epitaxial growth of tetragonal and hexagonal WSi2 on (111)SiJournal of Applied Physics, 1985
- Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) SiApplied Physics Letters, 1985
- Epitaxial growth of VSi2 on (111) SiJournal of Applied Physics, 1985
- Epitaxial growth of ZrSi2 on silicon with an ion beam mixing assisted schemeApplied Physics Letters, 1985
- The surface energy anisotropy of 3% silicon ironPhilosophical Magazine, 1973
- The effect of adsorbed oxygen on the surface energy of B.C.C. ironActa Metallurgica, 1968
- Interfacial energies of textured silicon iron in the presence of oxygenPhilosophical Magazine, 1968
- An effect of impurity atoms on the energy relationship of (100) and (110) surfaces in high purity silicon ironActa Metallurgica, 1960