A simple technique to measure stress in ultrathin films during growth
- 1 September 1995
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 66 (9) , 4734-4735
- https://doi.org/10.1063/1.1145316
Abstract
We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi2 formation on Si(111) is presented.Keywords
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