Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface
- 11 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2) , 110-112
- https://doi.org/10.1063/1.100384
Abstract
A parallel arrangement of thin wires has been fabricated in the AlxGa1−xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.Keywords
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