Influence of Cu(In,Ga)Se2 band gap on the valence band offset with CdS
- 18 December 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 451-452, 420-423
- https://doi.org/10.1016/j.tsf.2003.10.122
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103Published by Elsevier ,2004
- Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)2 heterojunction solar cellsApplied Physics Letters, 2002
- Composition dependence of defect energies and band alignments in the Cu(In1−xGax)(Se1−ySy)2 alloy systemJournal of Applied Physics, 2002
- Fermi level-dependent defect formation at Cu(In,Ga)Se2 interfacesApplied Surface Science, 2000
- Interface and surface properties of ternary semiconductorsJapanese Journal of Applied Physics, 2000
- Prospects of wide-gap chalcopyrites for thin film photovoltaic modulesSolar Energy Materials and Solar Cells, 1997
- Photoemission studies on Cu(In, Ga)Se2 thin films and related binary selenidesApplied Surface Science, 1996
- Band offsets and optical bowings of chalcopyrites and Zn-based II-VI alloysJournal of Applied Physics, 1995
- Formation and electronic properties of the CdS/CuInSe2 (011) heterointerface studied by synchrotron-induced photoemissionJournal of Applied Physics, 1995
- Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2Journal of Applied Physics, 1993