Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy
- 8 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19) , 1878-1880
- https://doi.org/10.1063/1.101246
Abstract
The unstrained valence‐band offset ΔEv for the x=0 and x=1 end points of the InxGa1−xAs/InP (100) heterojunction system has been measured by x‐ray photoemission spectroscopy (XPS). Although the GaAs/InP and InAs/InP interfaces are strained because of lattice mismatch, the ΔEv values obtained by the XPS measurement method used are characteristic of an unstrained interface. Values of ΔEv (GaAs/InP)=0.19 eV and ΔEv (InAs/InP)=0.31 eV are observed. A linear interpolation between the x=0 and x=1 values gives ΔEv (In0.53 Ga0.47As/ InP)=0.25 eV for the x=0.53 lattice‐matched interface (ΔEc /ΔEv =58/42).Keywords
This publication has 15 references indexed in Scilit:
- Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfacesJournal of Vacuum Science & Technology B, 1987
- Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53AsApplied Physics Letters, 1987
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- CV profiling on p-p- and n-s.i.-In0.53Ga0.47As/InP heterointerfacesSurface Science, 1986
- Investigation of InGaAs-InP quantum wells by optical spectroscopySemiconductor Science and Technology, 1986
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescence measurements of band discontinuity in InP-InGaPAs heterostructuresApplied Physics Letters, 1985
- Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopyPhysical Review B, 1983
- Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- An n-In0.53Ga0.47As/n-InP rectifierJournal of Applied Physics, 1981