Evaluation of Multijunction Structures Using Amorphous Si-Ge Alloys
- 1 January 1979
- conference paper
- Published by Springer Nature
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electronic Transport in Doped a‐Ge and a‐Si Prepared by DC Cathodic SputteringPhysica Status Solidi (b), 1978
- Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow dischargeSolid State Communications, 1977
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Amorphous silicon p-n junctionApplied Physics Letters, 1976
- Comparison of the molecular cluster model with the phonon model for Jahn—Teller active impurities in crystalsSolid State Communications, 1975
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970