Characterization of Ultrathin CaF2 Films Heteroepitaxially Grown on Si(111) Surfaces
- 1 February 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (2A) , L170-172
- https://doi.org/10.1143/jjap.27.l170
Abstract
Ultrathin CaF2 films heteroepitaxially grown on Si(111) substrates have been characterized by low-energy electron energy loss spectroscopy and Auger electron spectroscopy. The measured specimens were transferred from the growth chamber to an analyzing chamber located at a distant facility without suffering any contamination by use of a newly developed portable vacuum chamber. It has been proved from the measurements that a CaF2 film of good quality grows even from the very initial stage of epitaxy.Keywords
This publication has 10 references indexed in Scilit:
- In-situ observation of defect formation in CaF2(111) surfaces induced by low energy electron bombardmentSurface Science, 1987
- Low-Energy Electron Energy Loss Spectroseopy on CaF2(111) SurfacesJapanese Journal of Applied Physics, 1987
- Photoemission study of bonding at the-on-Si(111) interfacePhysical Review B, 1987
- Electronic structure of the/Si(111) interfacePhysical Review B, 1986
- Ca/Si(111): Thin-film characterization by high-resolution electron-energy-loss spectroscopyPhysical Review B, 1986
- Molecular beam epitaxy growth and applications of epitaxial fluoride filmsJournal of Vacuum Science & Technology A, 1986
- Epitaxial growth and characterization of CaF2 on SiJournal of Applied Physics, 1985
- Epitaxial relations in group-IIa fluoride/Si(111) heterostructuresApplied Physics Letters, 1983
- Improvement of Sensitivity of Electron Energy Loss SpectroscopyJapanese Journal of Applied Physics, 1983
- Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and SiApplied Physics Letters, 1982