Reconstruction on Si(100) surfaces

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Abstract
We have observed several reconstructions on a Si(100) surface with different annealing procedures. The observed reconstructed phases are the coexistence of the (2×2) phase and the (2×8) phase after high-temperature (≳950 K) annealing followed by quenching, and the half-order streak with the presence of the (2×1) phase after low-temperature (≲950 K) annealing. The phase transition from the metastable (2×2) and (2×8) phases to the stable half-order streak is reversible upon annealing temperature and cooling rate. The distribution of kinks and missing dimer defects is expected to be the main cause of these reconstructions.