Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 79-84
- https://doi.org/10.1016/0022-0248(87)90369-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Generation and propagation of defects into molecular beam epitaxially grown GaAs from an underlying GaAs substrateJournal of Applied Physics, 1985
- Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperatureApplied Physics A, 1985
- Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopyApplied Physics Letters, 1985
- Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlatticesApplied Physics Letters, 1985
- Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperatureElectronics Letters, 1985
- Room-temperature excitons in 1.6-μm band-gap GaInAs/AlInAs quantum wellsApplied Physics Letters, 1985
- Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlatticesApplied Physics Letters, 1984
- Mode locking by synchronous pumping using a gain medium with microsecond decay timesOptics Letters, 1982
- Optical properties and stable, broadly tunable cw laser operation of new FA-type centers in Tl+-doped alkali halidesOptics Communications, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981