Electron focusing with a double grid in AlGaAs/GaAs heterostructures
- 2 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (9) , 1093-1095
- https://doi.org/10.1063/1.106454
Abstract
Electron focusing has been observed in single- and double-grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double-grid system.Keywords
This publication has 12 references indexed in Scilit:
- Fabrication of quantum wires and point contacts in GaAs/AlGaAs heterostructures using focused ion beam implanted gatesMicroelectronic Engineering, 1991
- Large magnetic depopulation of multiple parallel ballistic point contacts with circulating channelsPhysical Review B, 1990
- Electron focusing with multiparallel one-dimensional channels made by focused ion beamApplied Physics Letters, 1990
- Boundary scattering in quantum wiresPhysical Review Letters, 1989
- Conductance characteristics of ballistic one-dimensional channels controlled by a gate electrodeApplied Physics Letters, 1989
- Coherent electron focusing with quantum point contacts in a two-dimensional electron gasPhysical Review B, 1989
- Fabrication and transport characteristics of semiconductor wire and ring structuresJournal of Vacuum Science & Technology B, 1988
- One-dimensional GaAs wires fabricated by focused ion beam implantationApplied Physics Letters, 1987
- Computer simulation of current density profiles in focused ion beamsJournal of Vacuum Science & Technology B, 1987
- One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs HeterojunctionPhysical Review Letters, 1986