The growth of hetero-epitaxial SiC films by pyrolysis of various alkyl-silicon compounds
- 31 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 188-192
- https://doi.org/10.1016/0022-0248(74)90302-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- On the formation of β-SiC from pyrolysis of CH3SiCl3 in hydrogenJournal of Crystal Growth, 1972
- Silicon carbide contamination of epitaxial silicon grown by pyrolysis of tetramethyl silaneJournal of Crystal Growth, 1971
- FORMATION OF EPITAXIAL β-SiC FILMS ON SAPPHIREApplied Physics Letters, 1969
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964
- The kinetics of the thermal decomposition of gaseous silicon tetraethyl and silicon tetrapropylTransactions of the Faraday Society, 1940