Silicon carbide contamination of epitaxial silicon grown by pyrolysis of tetramethyl silane
- 1 May 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 9, 127-131
- https://doi.org/10.1016/0022-0248(71)90219-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Chemical Transport Epitaxy of Silicon by Organic CompoundsJournal of the Electrochemical Society, 1970
- Epitaxial Gallium Arsenide from Trimethyl Gallium and ArsineJournal of the Electrochemical Society, 1969
- Low-Temperature Epitaxial Growth of Single Crystalline Silicon from SilaneJournal of the Electrochemical Society, 1969
- β-Silicon Carbide FilmsJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum AlkoxideJournal of the Electrochemical Society, 1967
- Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon SubstratesJournal of the Electrochemical Society, 1963
- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961
- Single Crystal Silicon OvergrowthsJournal of the Electrochemical Society, 1961
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959