Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy
- 2 February 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (8) , 085203
- https://doi.org/10.1103/physrevb.63.085203
Abstract
Electronic properties of GaAs grown by low-temperature molecular beam epitaxy are analyzed using a model that assumes a semiconducting matrix with embedded semimetallic As clusters. The static and high-frequency conductivity, Hall effect, lifetime of photoexcited carriers, current-voltage characteristic, and the screening phenomena are all considered. Model results are compared with existing experimental data and a proposal is given for new experiments that could determine currently unknown properties of the material.Keywords
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