Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
- 1 October 2004
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 270 (3-4) , 409-419
- https://doi.org/10.1016/j.jcrysgro.2004.06.060
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Crystal growth and liquid-phase epitaxy of gallium nitrideJournal of Crystal Growth, 2000
- Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth MethodJapanese Journal of Applied Physics, 2000
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984