Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE
- 1 December 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 246 (3-4) , 194-206
- https://doi.org/10.1016/s0022-0248(02)01742-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxyApplied Physics Letters, 2001
- Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase EpitaxyPhysica Status Solidi (a), 2001
- Growth and Doping of GaN and AlN Single Crystals under High Nitrogen PressureCrystal Research and Technology, 2001
- Structural and optical properties of thick freestanding GaN templatesJournal of Crystal Growth, 2001
- Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxyJournal of Crystal Growth, 2000
- Recent advances in defect-selective etching of GaNJournal of Crystal Growth, 2000
- Preparation and properties of free-standing HVPE grown GaN substratesJournal of Crystal Growth, 1998
- Chemical polishing of bulk and epitaxial GaNJournal of Crystal Growth, 1997
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. III. Pressure-Temperature Phase Diagrams, Heats of Mixing, and Distribution CoefficientsPhysical Review B, 1973