Recent advances in defect-selective etching of GaN
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (1-3) , 151-156
- https://doi.org/10.1016/s0022-0248(99)00669-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Crystallographic wet chemical etching of GaNApplied Physics Letters, 1998
- Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystalsApplied Physics Letters, 1998
- Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etchingJournal of Crystal Growth, 1998
- EBIC observation of n-GaN grown on sapphire substrates by MOCVDJournal of Crystal Growth, 1998
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaNJapanese Journal of Applied Physics, 1998
- Highly anisotropic photoenhanced wet etching of n-type GaNApplied Physics Letters, 1997
- Current Controlled Photoelectrochemical Etching of Gan Leaving Smooth SurfacesMRS Proceedings, 1997
- Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire SubstratesJournal of the Electrochemical Society, 1996
- Etching of GaN Using Phosphoric AcidJournal of the Electrochemical Society, 1976
- Crystal Growth and Characterization of Gallium NitrideJournal of the Electrochemical Society, 1974