Growth and Doping of GaN and AlN Single Crystals under High Nitrogen Pressure
- 25 October 2001
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 36 (8-10) , 771-787
- https://doi.org/10.1002/1521-4079(200110)36:8/10<771::aid-crat771>3.0.co;2-j
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Crystal growth and liquid-phase epitaxy of gallium nitrideJournal of Crystal Growth, 2000
- Growth of GaN Single Crystals under High Nitrogen Pressures and their CharacterizationCrystal Research and Technology, 1999
- Interaction of N2 molecule with liquid Ga surface – quantum mechanical calculations (DFT)Journal of Crystal Growth, 1998
- Growth of AlN Single CrystalsMRS Proceedings, 1998
- High Resistivity GaN Single Crystalline SubstratesActa Physica Polonica A, 1997
- Physical Properties of Bulk GaN Crystals Grown by HVPEMRS Internet Journal of Nitride Semiconductor Research, 1997
- The microstructure of gallium nitride monocrystals grown at high pressureJournal of Crystal Growth, 1996
- Growth of Bulk AlN and GaN Single Crystals by SublimationMRS Proceedings, 1996
- Native defects in gallium nitridePhysical Review B, 1995
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984