Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy
- 1 June 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 213 (3-4) , 235-240
- https://doi.org/10.1016/s0022-0248(00)00364-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescenceApplied Physics Letters, 1998
- Preparation and properties of free-standing HVPE grown GaN substratesJournal of Crystal Growth, 1998
- Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystalsApplied Physics Letters, 1998
- Adatom diffusion at GaN (0001) and (0001̄) surfacesApplied Physics Letters, 1998
- Polarity of (00.1) GaN epilayers grown on a (00.1) sapphireApplied Physics Letters, 1997
- Structural and Optical Properties of Homoepitaxial GaN LayersMRS Proceedings, 1996
- Gallium Nitride Thick Films Grown by Hydride Vapor Phase EpitaxyMRS Proceedings, 1996
- Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaNMRS Proceedings, 1995
- Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth, 1990
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989