Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopySolid State Communications, 1995
- Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAsJournal of Applied Physics, 1995
- Exciton dynamics in Ni-activated CdSPhysical Review B, 1994
- Cathodoluminescence wavelength imaging for spatial mapping of excitons bound to dislocations and structural defects in cdsAdvanced Materials for Optics and Electronics, 1992
- Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting DevicesMRS Proceedings, 1992
- Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth, 1990
- Magneto-Optics of Excitons Bound to Dislocations in CdSMaterials Science Forum, 1989
- Photoluminescence of GaN epitaxial layersJournal of Physics C: Solid State Physics, 1982