Adatom diffusion at GaN (0001) and (0001̄) surfaces
- 27 July 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (4) , 487-489
- https://doi.org/10.1063/1.121909
Abstract
The diffusion of Ga and N adatoms has been studied for the technologically relevant wurtzite (0001̄) and (0001) surfaces employing density-functional theory. Our calculations reveal a very different diffusivity for Ga and N adatoms on the equilibrium surfaces: While Ga is very mobile at typical growth temperatures, the diffusion of N is by orders of magnitude slower. These results give a very detailed insight of how and under which growth conditions N adatoms can be stabilized and efficiently incorporated at the surface. We further find that the presence of excess N strongly increases the Ga diffusion barrier and discuss the consequences for the growth of GaN.Keywords
All Related Versions
This publication has 12 references indexed in Scilit:
- Novel Diffusion Mechanism on the GaAs(001) Surface: The Role of Adatom-Dimer InteractionPhysical Review Letters, 1997
- Reconstructions of theSurfacePhysical Review Letters, 1997
- Theory of surface morphology of wurtzite GaN (0001) surfacesPhysical Review B, 1997
- Theoretical treatment of the nonlinear anelastic internal friction peaks appearing in the cold-worked Al-based solid solutionsPhysical Review B, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetimeApplied Physics Letters, 1997
- Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAsApplied Physics Letters, 1996
- Tight-Binding Initialization for Generating High-Quality Initial Wave Functions: Application to Defects and Impurities in GaNMRS Proceedings, 1995
- Theoretical study of GaN growth: A Monte Carlo approachJournal of Applied Physics, 1994
- Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theoryComputer Physics Communications, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994