High-temperature limit of the non-radiative multiphonon carrier-capture cross-sections of deep traps in semiconductors
- 1 September 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 83 (1) , K55-K58
- https://doi.org/10.1002/pssb.2220830153
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Deep level spectroscopy, low temperature defect motion and nonradiative recombination in GaAs and GaPJournal of Electronic Materials, 1975
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- Calculation of nonradiative multiphonon capture coefficients and ionization rates for neutral centres according to the static coupling scheme: I. TheoryPhysica Status Solidi (b), 1975
- Description of nonradiative multiphonon transitions in the static coupling schemeCzechoslovak Journal of Physics, 1974