A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes
- 15 February 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (4) , 2162-2165
- https://doi.org/10.1063/1.345555
Abstract
A new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes formed by Au and Al contacts was investigated, and the results were compared with those of (NH4)2Sx‐ and NH4OH/HF‐treated devices. With new surface treatment, the effective barrier heights for both the Al‐ and Au‐GaAs Schottky diodes were found to vary with the work function of metals, which is clear evidence of the lower surface state density in these diodes. Results of the I‐V and C‐V measurements show that P2S5/(NH4)2S‐passivated diodes have lower reverse leakage current and higher effective barrier height than that of the (NH4)2Sx‐treated diodes.This publication has 10 references indexed in Scilit:
- Photoemission study of the band bending and chemistry of sodium sulfide on GaAs (100)Applied Physics Letters, 1989
- Surface passivation of GaAsApplied Physics Letters, 1989
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodesApplied Physics Letters, 1988
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Reduction of GaAs surface recombination velocity by chemical treatmentApplied Physics Letters, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Effect of native oxide on the interface property of GaAs MIS structuresApplied Physics Letters, 1978
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965