Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
- 1 May 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (5R)
- https://doi.org/10.1143/jjap.35.2749
Abstract
The self-limiting growth in atomic layer epitaxy (ALE) of ZnS on (100)-GaAs substrate was investigated using a horizontal low-pressure metalorganic chemical vapor deposition (MOCVD) system. The growth rate per cycle was kept constant at one monolayer, independent of the substrate temperature which was in the range of 125° C to 200° C. Under optimal growth conditions, ZnS layers grown in the ALE mode showed good surface morphology. Photoluminescence (PL) showed three peaks; a near-band-edge emission at 349 nm, a self-activated emission at 434 nm and a broad one at around 500 and 600 nm, which is considered to be due to relaxation through dislocation formation.Keywords
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