Low temperature formation of silicon nitride and oxide films by the simultaneous use of a microwave ion source and an ICB source
- 1 January 1989
- Vol. 39 (11-12) , 1111-1113
- https://doi.org/10.1016/0042-207x(89)91101-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Low temperature growth of A1n and Al2O3 films by the simultaneous use of a microwave ion source and an ionized cluster beam systemThin Solid Films, 1988
- SiO2 Thin Film Prepared from Si3H8 and O2 by Photo-CVD Using Double ExcitationJapanese Journal of Applied Physics, 1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Photochemical vapor deposition of silicon nitride filmsJournal of Vacuum Science & Technology A, 1986
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986
- UV Irradiation Effects on Chemical Vapor Deposition of SiO2Japanese Journal of Applied Physics, 1985
- Axial magnetic field extraction-type microwave ion source with a permanent magnetReview of Scientific Instruments, 1984
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Electrical properties of Si-N films deposited on silicon from reactive plasmaJournal of Applied Physics, 1978
- Tunnel mechanism in MNOS structuresPhysica Status Solidi (a), 1970