SiO2 Thin Film Prepared from Si3H8 and O2 by Photo-CVD Using Double Excitation
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A) , L908
- https://doi.org/10.1143/jjap.26.l908
Abstract
Silicon dioxide thin films have been prepared at low temperatures from 25 to 390°C from Si3H8 and O2 gases by photo-CVD using the double excitation of VUV light from a D2 lamp and UV light from a Hg lamp. Growth rate is ∼150 Å/min at 25°C and decreases as the substrate temperature increases. The amount of Si-H and Si-OH, and the fixed-oxide-charge also decrease as the temperature increases. The film deposited at 260°C shows small interface state density and the minimum is 3.6 × 1010 cm-2eV-1 near the midgap.Keywords
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