Low Temperature Growth of SiO2 Thin Film by Double-Excitation Photo-CVD

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Abstract
A new technique for the low-temperature growth of SiO2 films has been developed by double-excitation photo-CVD. SiO2 films can be grown at 30∼240°C from a mixture of Si2H6 and O2 by photo-CVD using a D2 lamp as a VUV light source, or by double-excitation using an additional Xe lamp or a low-pressure Hg lamp as a UV light source. The growth rate is 90 Å/min in a photo-CVD at 30°C, while deposition does not occur in thermal CVD at 30°C. Concentrations of Si–OH and Si–H bonds can be considerably reduced by the use of photo-excitation. Particularly, double-excitation reduces the oxide-charge density to a large extent and also brings the dielectric constants close to those of thermally-grown SiO2. The minimum charge density is 5×1010 cm-2 in a film deposited at 240°C. The interface state density of a Si MOS diode is also reduced by double-excitation using a Hg lamp in an O2-excess atmosphere and annealing at 280°C. Its minimum density is 8×1010 cm-2eV-1.

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