Growth of Hydrogenated Amorphous Silicon Films by ArF Excimer Laser Photodissociation of Disilane
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A) , L91
- https://doi.org/10.1143/jjap.23.l91
Abstract
Hydrogenated amorphous silicon films have been grown on glass substrates by photodissociation of disilane using a pulsed ArF excimer laser foe the first time. Electrical and optical properties of the films have been examined. It was found that the magnitude of the gap energy of laser CVD films is rather large as compared to that of films obtained by a conventional plasma CVD. Preliminary examinations to control the conductivity by impurity doping have also been performed.Keywords
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